SREM
Scanning Reflection EUV Microscope
SREM
A scanning reflection EUV microscope (SREM) is a type of microscope which has similar application
with SEM(scanning electron microscope), STEM(scanning transmission electron microscope) and SPM
(scanning probe microscope). As with other scanning microscopy, images are formed by scanning
of fine EUV beam spot which is focused through a sufficiently thin membrane of zone plate.
with SEM(scanning electron microscope), STEM(scanning transmission electron microscope) and SPM
(scanning probe microscope). As with other scanning microscopy, images are formed by scanning
of fine EUV beam spot which is focused through a sufficiently thin membrane of zone plate.
Obtaining EUV actinic images during the EUV blank and EUV mask fabrication is very important.
Unlike conventional EUV imaging method which is necessary large area EUV mirrors, ESOL has developed
SREM by approaching scanning method to reduce the cost of ownership while maintaining acquisition of
high performance EUV image. ESOL’s SREM adopts ultra high vacuum, hyperfine vibration control and
nano positioning system to avoid compromising image performance with scanning method.
Unlike conventional EUV imaging method which is necessary large area EUV mirrors, ESOL has developed
SREM by approaching scanning method to reduce the cost of ownership while maintaining acquisition of
high performance EUV image. ESOL’s SREM adopts ultra high vacuum, hyperfine vibration control and
nano positioning system to avoid compromising image performance with scanning method.
- Advantages
-
- Low cost of ownership of EUV mask imaging
- Long MTBF and Short MTTR
- Small foot print
- High extendibility to future node
Defect Image
Reference image- Applications
-
- EUV mask pattern’s aerial image analysis
- EUV mask defect and pattern verification after repair
- Verification for compensation EUV phase defect repair
- EUV blank defect shift and size verification
- EUV mask lifetime monitoring
- EUV mask blind layer verification
- Printable actinic defect disposition from DUV inspection
- result with ESOL actinic review and algorithm